Patent · US Expired

Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups

US5238773A · kind A · utility

3Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 8, 1992
Grant dateAug 24, 1993
Priority date
Expiry dateJun 8, 2012

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/0755
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A composition containing an organosilicon material having terminal quinone groups, and a phenolic-novolak polymer, and use thereof in photolithography.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.