Gallium nitride group compound semiconductor laser diode
US5247533A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 26, 1991 |
| Grant date | Sep 21, 1993 |
| Priority date | — |
| Expiry date | Dec 26, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N (where 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x' Ga.sub.1-x').sub.y' In.sub.1-y' N (where 0.ltoreq.x'.ltoreq.1, 0.ltoreq.y'.ltoreq.1, x=x' or x.noteq.x', and, y=y' or y.noteq.y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.