Hiroshi Amano
10Patents
0Active
10Granted
31Portfolio score
Filing activity: Dec 26, 1991 → Nov 15, 2000
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5247533A | Gallium nitride group compound semiconductor laser diode | Electricity | 190 | Expired |
| US5389571A | Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer | Emerging Cross-Sectional Technologies | 171 | Expired |
| US5862167A | Light-emitting semiconductor device using gallium nitride compound | Electricity | 111 | Expired |
| US5239188A | Gallium nitride base semiconductor device | Emerging Cross-Sectional Technologies | 109 | Expired |
| US5583879A | Gallum nitride group compound semiconductor laser diode | Electricity | 38 | Expired |
| US5370738A | Compound semiconductor vapor phase epitaxial device | Chemistry; Metallurgy | 37 | Expired |
| US5604763A | Group III nitride compound semiconductor laser diode and method for producing same | Electricity | 36 | Expired |
| US5905276A | Light emitting semiconductor device using nitrogen-Group III compound | Electricity | 22 | Expired |
| US6486068B2 | Method for manufacturing group III nitride compound semiconductor laser diodes | Electricity | 5 | Expired |
| US6962828B1 | Methods for manufacturing a light-emitting device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.