Method of growing silicon monocrystalline rod
US5258092A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1992 |
| Grant date | Nov 2, 1993 |
| Priority date | — |
| Expiry date | Mar 23, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/917
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming means is arranged above and/or below a melting zone of said silicon monocrystalline rod to surround said silicon monocrystalline rod and a magnetic field is applied to the melting zone of the silicon monocrystalline rod through said magnetic forming means, and preferably the magnetic field forming means is constituted by supplying a direct electric current through a solenoid coil surrounding said silicon monocrystalline rod.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.