Method of forming a superconducting oxide layer by MOCVD
US5280012A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Jul 22, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/734
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.