Device and method for accurate etching and removal of thin film
US5282925A · kind A · utility
125Cited by
6References
48Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1992 |
| Grant date | Feb 1, 1994 |
| Priority date | — |
| Expiry date | Nov 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.