Process for making semiconductor electrode bumps by metal cluster ion deposition and etching
US5290732A · kind A · utility
33Cited by
23References
29Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 9, 1992 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Jun 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ionized metal cluster beam deposition of metal bumps on substrates such as multi-chip modules and integrated circuit chips is enhanced. The present invention discloses wet etching techniques for removing unwanted metal deposited on the substrate around bumps, and multiple sources for depositing alloyed (tin-lead) bumps with constant composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.