Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure
US5324684A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1992 |
| Grant date | Jun 28, 1994 |
| Priority date | — |
| Expiry date | Feb 25, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/923
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for doping silicon material or other semiconductors uses gas phase dopant sources under reduced pressure in a radiantly heated, cold-wall reactor. The technique is applied to the automated integrated circuit manufacturing techniques being adopted in modern fabrication facilities. The method includes placing a substrate comprising semiconductor material on a thermally isolated support structure in a reduced pressure, cold-wall reaction chamber; radiantly heating the substrate within the reaction chamber to a controlled temperature; flowing a gas phase source of dopant at controlled pressure and concentration in contact with the substrate so that the dopant is absorbed by the substrate, and annealing the substrate. The substrate may be first coated with a layer of polycrystalline semiconductor, and then gas phase doping as described above may be applied to the polycrystalline layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.