Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor

US5326718A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Klose · Munich, DE
• Thomas Meister · Taufkirchen, DE
• Hans-Willi Meul · Bruckmühl, DE
• Reinhard Stengl · Stadtbergen, DE

Key dates

• Filing date: Sep 23, 1992
• Grant date: Jul 5, 1994
• Expiry date: Sep 23, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for the manufacture of a laterally limited single crystal region that is suitable for use as an active part of a transistor.