Ionized metal cluster beam systems and methods
US5331172A · kind A · utility
19Cited by
25References
31Claims
0Family size
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Inventors
Key dates
| Filing date | Sep 29, 1993 |
| Grant date | Jul 19, 1994 |
| Priority date | — |
| Expiry date | Sep 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ionized metal cluster beam deposition of metal bumps on substrates such as multi-chip modules and integrated circuit chips is enhanced. The present invention discloses wet etching techniques for removing unwanted metal deposited on the substrate around bumps, multiple sources for depositing alloyed (tin-lead) bumps with constant composition, and single or multiple sources for directing a cluster beam through an aperture to deposit metal on a substrate and directing an ion beam at the aperture to remove metal deposited therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.