Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5366585A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1993 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Jan 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for protecting conductive, typically metallic, walls (212) of a plasma process chamber (200) from accumulation of contaminants thereon and from reaction with a gas plasma and either deposition-gas plasma by-products. A ceramic barrier material (220-223), preferably of at least 0.005 inches 127 micrometers) thickness, is used adjacent the conductive portions of the reactor chamber and between the gas plasma and such conductive portions to be protected. The ceramic barrier material reduces the deposit of compounds formed from the plasma on protected reactor chamber surfaces and thereby avoiding the formation of a source of particulates. Further, the ceramic barrier material enables cleaning of the reactor chamber using an etch plasma generated from halogen-comprising gas without the etch plasma attacking protected metallic portions of the reactor. The ceramic liner can serve an additional function of preventing arcing or local intense plasma discharge from a plasma-generation electrode (216), to a conductive portion of the reactor chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.