Reaction chamber design to minimize particle generation in chemical vapor deposition reactors
US5368646A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1994 |
| Grant date | Nov 29, 1994 |
| Priority date | — |
| Expiry date | Jan 12, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surfaces which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature. Apparatus for controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. The apparatus includes a plasma shield having a line-of-sight surface and a plasma target having a target surface. The line-of-sight surface defines a bore through the plasma shield and is located out of direct contact with a plasma stream, such as oxygen, which passes from a plasma chamber, through the bore, and into a reaction chamber. A semiconductor specimen is mounted on a support in th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.