Compound semiconductor vapor phase epitaxial device
US5370738A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 3, 1993 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Feb 3, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.