Polyemitter structure with improved interface control
US5374481A · kind A · utility
4Cited by
11References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1993 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Aug 5, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polyemitter structure having a thin interfacial layer deposited between the polysilicon emitter contact and the crystalline silicon emitter, as opposed to a regrown SiO.sub.x layer, has improved reproducibility and performance characteristics. A n-doped hydrogenated microcrystalline silicon film can be used as the deposited interfacial film between a crystalline silicon emitter and a polycrystalline silicon contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.