Magnetron plasma processing apparatus and processing method
US5376211A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 27, 1991 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Sep 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3344
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.