Etch stop layer using polymers for integrated circuits
US5395796A · kind A · utility
11Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Jan 11, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etch stop layer (22) for permitting distinguishing between two similar layers (20, 24), such as two oxide layers, during etching is provided. The etch stop layer comprises a silicon-oxyhalide polymer, preferably a silicon-oxyfluoride polymer. Use of the polymer as an etch stop layer permits closer placement of metal conductor surfaces (12, 12') and contacts (14').
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.