Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5399237A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1994 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Jan 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for etching titanium nitride on a substrate 20 is described. In the process, a substrate 20 having a titanium nitride layer 24c thereon, and an insulative oxide layer 26 on the titanium nitride layer 24c is placed in a process chamber 42. Either a single stage, or a multiple stage version, of the process is then effected to etch the insulative oxide and titanium nitride layers. In the single stage version, the insulative oxide layer 26 and titanium nitride layer 24c are etched in a single stage, by introducing an etchant gas comprising carbon-fluoride gas and carbon-oxide gas into the process chamber 42, and generating a plasma from the etchant gas. The multiple stage version, comprises a first stage in which the insulative oxide layer 26 is etched using a plasma generated from carbon-fluoride gas, and a second stage in which the titanium nitride layer 24c is etched using a plasma generated from an etchant gas comprising carbon-fluoride gas and carbon-oxide gas. Suitable carbon-fluoride gases comprise CF.sub.3, CF.sub.4 , CH.sub.3 F, CHF.sub.3, C.sub.2 F.sub.6, C.sub.3 F.sub.8, C.sub.4 F.sub.8 or C.sub.4 F.sub.10, and suitable carbon-oxide gases comprise CO or CO.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.