Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
US5399387A · kind A · utility
78Cited by
6References
7Claims
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Key dates
| Filing date | Apr 13, 1994 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Apr 13, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/153
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.