Method for forming offset magnetoresistive memory structures
US5424236A · kind A · utility
48Cited by
9References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1993 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Jul 1, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A digital memory having a plurality of electrically connected bit structures extending over a path with adjacent ones offset from one another in a direction substantially perpendicular to that path. The bit structures are formed of two ferromagnetic films with an exchange coupling barrier therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.