Patent · US Expired

Tunnel effect acceleration sensor

US5431051A · kind A · utility

15Cited by

3References

3Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Markus Biebl · Augsburg, DE
Thomas Scheiter · Munich, DE
Helmut Klose · Munich, DE

Key dates

Filing date	Mar 29, 1994
Grant date	Jul 11, 1995
Priority date	—
Expiry date	Mar 29, 2014

Classification

Technology area (CPC G)Physics
CPC primaryG01P15/0894
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An acceleration sensor is produced on a silicon substrate by etching to leave a cantilevered beam of polysilicon with a tip on the substrate projecting toward this beam. Acceleration of the sensor causes the beam to bend, thereby changing the spacing between the tip and the beam, and thereby also changing the tunnel current, which is measured. Electrodes are provided that, given application of a potential thereto, effect an electrostatic compensation of the bending of the beam.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.