Interconnect structure having improved metallization
US5436412A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1993 |
| Grant date | Jul 25, 1995 |
| Priority date | — |
| Expiry date | Aug 3, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0979
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An electrical interconnect structure for connecting a substrate to the next level of packaging or to a semiconductor device. The interconnect structure includes at least two layers of polymeric material, one of the layers having a capture pad and the second of the layers having a bonding pad electrically connected to the capture pad. The bonding pad and the second layer of polymeric material are at the same height so that the bonding pad is level with the second layer of polymeric material. Finally, there is a cap of electrically conducting metallization on the bonding pad and extending beyond the second layer of polymeric material. The cap is of a different composition than the bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.