Composite diagnostic wafer for semiconductor wafer processing systems
US5451784A · kind A · utility
33Cited by
7References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1994 |
| Grant date | Sep 19, 1995 |
| Priority date | — |
| Expiry date | Oct 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24507
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A composite diagnostic wafer containing a placebo wafer having the same dimensions as a semiconductor wafer. The placebo wafer has affixed to one surface one or more ion current probes and one or more ion energy analyzers. As such, measurement instrumentation connected to the analyzer(s) and probe(s) determines ion current and ion energy at various locations on the placebo wafer during plasma generation within a semiconductor wafer processing system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.