Metal complex source reagents for MOCVD
US5453494A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1994 |
| Grant date | Sep 26, 1995 |
| Priority date | — |
| Expiry date | Jan 18, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0464
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. The complexes of the invention utilize monodentate or multidentate ligands to provide additional coordination to the metal atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.