Non-volatile memory structure including protection and structure for maintaining threshold stability
US5457336A · kind A · utility
38Cited by
1References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 13, 1994 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Oct 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
An improved nonvolatile memory device is provided, in which the threshold voltage variations (V.sub.ts) and transconductance degradation are significantly reduced. The NVM includes protection structure for limiting the process induced damage incurred during the manufacturing process. The protection structure is utilized to provide reliable and stable dielectrical characteristics for the NVM device. The protection structure is easy to implement and will not affect the conventional NVM performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.