Method and apparatus for high-flatness etching of wafer
US5474644A · kind A · utility
12Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Jul 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus for high-flatness etching a semiconductor single crystal wafer wherein said wafer is so rotated in a flow of an ethchant radially spreading in a plane that the main surface of said wafer may move parallelly with the flow of said etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.