Method of making semiconductor wafers
US5494862A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | May 27, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for a flatter semiconductor wafer free of ORP-observed irregularity and particles generated in handling on the back side of the wafer, in which an alkaline etching is adopted to utilize its advantage and a slight polishing step is combined to a conventional method of this kind. A deficiency of alkaline etching which brings about rougher surface irregularities on the surface of a wafer is eliminated by the use of the step of slight polishing on the back surface after the etching step and the inherent advantage stands without a loss, so that particle generation from the back surface of a semiconductor wafer in handling is much reduced and what's more a flatter semiconductor wafer is realized and a yield of an electronic device fabrication is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.