Semiconductor device and method of manufacturing the same
US5510647A · kind A · utility
11Cited by
1References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 15, 1994 |
| Grant date | Apr 23, 1996 |
| Priority date | — |
| Expiry date | Mar 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A bipolar transistor is formed on a silicon substrate having a silicon oxide film. An n-silicon layer having a top surface of a (100) plane is formed on the silicon oxide film and is used as a collector layer. An end face constituted by a (111) plane is formed on the end portion of the collector layer by etching, using an aqueous KOH solution. A B-doped p-silicon layer is formed on the end face by epitaxial growth and is used as a base layer. Furthermore, an As-doped n-silicon layer is formed on the base layer and is used as an emitter layer. Electrodes are respectively connected to the collector, base, and emitter layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.