Method of forming a thin film
US5514425A · kind A · utility
29Cited by
0References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 6, 1995 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Mar 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.