Method and apparatus for cold wall chemical vapor deposition
US5551985A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1995 |
| Grant date | Sep 3, 1996 |
| Priority date | — |
| Expiry date | Aug 18, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45589
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor includes a vacuum chamber having first and second thermal plates disposed therein and two independently-controlled multiple-zone heat sources disposed around the exterior thereof. The first heat source has three zones and the second heat source has two zones. A wafer to be processed is positioned below the first thermal plate and immediately above the second thermal plate, thereby being indirectly heated from above by the first heat source via the first thermal plate and indirectly heated from below by the first zone of the second heat source via the second thermal plate. A thermal ring plate which laterally surrounds the edge of the wafer absorbs heat energy emitted from the second zone of the second heat source and heats the outer edge of the wafer. First and second sensors embedded in the first thermal plate and the thermal ring plate, respectively, measure and provide the respective temperatures thereof to a computer which, in response thereto, adjusts power to the three zones of the first heat source and the two zones of the second heat source to maintain the first thermal plate and the thermal ring plate, respectively, at a constant temperature. In this manner, …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.