Method for producing a silicon single crystal by a float-zone method
US5556461A · kind A · utility
7Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1994 |
| Grant date | Sep 17, 1996 |
| Priority date | — |
| Expiry date | Jun 15, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.