PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
US5563105A · kind A · utility
303Cited by
12References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 30, 1994 |
| Grant date | Oct 8, 1996 |
| Priority date | — |
| Expiry date | Sep 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fluorine-doped oxide is formed that is resistant to water absorption by the use of two sources of silicon, one being the fluorine precursor and the other being available to react with excess fluorine from the fluorine precursor, thereby reducing the number of fluorine radicals in the layer; the fluorine precursor containing a glass-forming element that combines with the other glass constituents to carry into the gas a diatomic radical containing one atom of fluorine and one atom of the glass-forming element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.