Patent · US Expired

Method of manufacturing sensor

US5616523A · kind A · utility

41Cited by
10References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 2, 1996
Grant dateApr 1, 1997
Priority date
Expiry dateApr 2, 2016

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01P2015/0828
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.