Reduction of contaminant buildup in semiconductor apparatus
US5622565A · kind A · utility
23Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1996 |
| Grant date | Apr 22, 1997 |
| Priority date | — |
| Expiry date | Jan 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides an apparatus for semiconductor processing in which the reactor chamber and the vacuum conduit means connected to the chamber are coated with a film of halogenated polymer material having a low vapor pressure and a low sticking coefficient. Preferred materials include low molecular weight polyfluoroethylene polymers such as polytetrafluoroethylene and polychlorotrifluoro-ethylene. A method is provided to prevent contaminant buildup on coated surfaces of semiconductor processing chambers and vacuum conduit means connected thereto during processing of a workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.