Reducing particulate contamination during semiconductor device processing
US5622595A · kind A · utility
19Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1995 |
| Grant date | Apr 22, 1997 |
| Priority date | — |
| Expiry date | Nov 20, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Contaminant particles in a vacuum plasma processing chamber can be removed from the surface of a substrate in the chamber by first reducing the pressure in the chamber so as to elevate the particles above any obstruction about the substrate, including a clamping ring and the like, maintaining a plasma from a gas fed to the chamber so that the particles are in the plasma, and then increasing the gas flow to the chamber so as to sweep the particles out of the chamber through the exhaust system of the processing chamber while maintaining a plasma in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.