Method for forming hemispherical grained silicon
US5634974A · kind A · utility
68Cited by
4References
74Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1995 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Nov 3, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.