Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US5644467A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1995 |
| Grant date | Jul 1, 1997 |
| Priority date | — |
| Expiry date | Sep 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a basic structure and a method for fabrication of the structure which facilitates the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structure addresses the problem of the rf plasma environment which seeks the interface between the electrostatic chuck dielectric surface layer and its underlying conductive layer. The basic structure includes an underlying conductive layer which contains at least one gas flow passageway and at least one dielectric layer overlying said conductive layer. The dielectric layer forms the upper surface of the dielectric chuck and contains at least one opening or passageway which connects with the fluid flow passageway in the conductive layer. The dielectric layer thickness is greater in the area of the opening or passageway than at other locations on the surface of the dielectric chuck. The basic structure provides an insulative dielectric structure as the upper surface of the electrostatic chuck and improves the isolation of the electrostatic chuck dielectric surface from the underlying conductive layer. Typically, the conductive layer is an aluminum pedestal and the ove…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.