Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device

US5650641A · kind A · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventors

• Michinari Sassa · Miyoshi, JP
• Masayoshi Koike · Miyoshi, JP
• Katsuhide Manabe · Ichinomiya, JP
• Norikatsu Koide · Nara, JP
• Hisaki Kato · Hamamatsu, JP
• Naoki Shibata · Osaka, JP
• Makoto Asai · Kariya, JP
• Shinya Asami · Ebeye, US

Key dates

• Filing date: Aug 31, 1995
• Grant date: Jul 22, 1997
• Expiry date: Aug 31, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times…