Method to form self-aligned gate structures and focus rings
US5653619A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1994 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | Sep 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A selective etching and chemical mechanical planarization process is employed for the formation of self-aligned gate and focus ring structures surrounding an electron emission tip for use in field emission displays. The process is employed to construct an emission grid whereby the gate structure is capable of producing a field strength at the cathode tip sufficient to generate electron emission. The gate is disposed at a location above the tip such that the gate physically intercepts the outermost lateral portions of the beam, yet does not induce a significant electrostatic outward divergence of the beam, thereby reducing the cross-section of the beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.