Patent · US Expired

Reliable defect detection using multiple perspective scanning electron microscope images

US5659172A · kind A · utility

92Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 23, 1996
Grant dateAug 19, 1997
Priority date
Expiry dateFeb 23, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/2817
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method for fast and reliable defect detection on semiconductor devices by comparing SEM images from a single perspective followed by a cross-check between at least two perspectives. An SEM equipped with at least two electron detectors each of which is capable of collecting electrons from different angular sectors. `Base` images of an area of the semiconductor wafer which is to be inspected are generated from both perspectives. For each perspective base image, a perspective `reference` image is generated, which is suitable for comparison with the base image. The reference image is registered with respect to the base image, for each perspective, the reference image is compared with the base image, and a comparison map of possible defect locations is produced, and, finally, a cross-check is carried out between the perspective comparison maps. The cross-check filters out events in the perspective comparison maps relating to variations other than defects such as pattern variations and noise.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.