Magnetron plasma processing apparatus and processing method
US5660671A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 28, 1994 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Jun 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3344
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.