Method for forming an interconnect having a penetration limited contact structure for establishing a temporary electrical connection with a semiconductor die
US5686317A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1995 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Feb 13, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an interconnect for establishing a temporary electrical connection with contact locations (e.g., bond pads) on a semiconductor die is provided. The interconnect includes a substrate (e.g., silicon) having raised contact members that correspond to the contact locations on the die. Each raised contact member includes one or more projections adapted to penetrate the contact locations on the die to a limited penetration depth. The raised contact member and projections are covered with a metal silicide layer formed using a salicide process. The metal silicide layer is in contact with conductive traces formed on the substrate of a highly conductive metal. Alternately the raised contact members and projections can be formed as a metal layer or as a bi-metal stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.