Electrical test structure to quantify microloading after plasma dry etching of metal film
US5693178A · kind A · utility
2Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1996 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Jan 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microloading quantification apparatus is comprising a supporting substrate, a first bonding pad deposited upon the supporting substrate, a second bonding pad deposited upon the supporting substrate, and an etched conductive pattern deposited upon the supporting substrate and operably connected to the first bonding pad and the second bonding pad. Methods for the formation and application of the microloading quantification apparatus to quantify the variation of the microloading effect as a result of modifications of the set of parameters of integrated circuit processing particularly those of the plasma dry etch are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.