Use of cobalt tungsten phosphide as a barrier material for copper metallization
US5695810A · kind A · utility
606Cited by
6References
21Claims
0Family size
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Key dates
| Filing date | Nov 20, 1996 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Nov 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.