MOSFET with solid phase diffusion source
US5698881A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1994 |
| Grant date | Dec 16, 1997 |
| Priority date | — |
| Expiry date | Dec 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff nm! is determined by L.sub.eff >0.69 x.sub.j -6.17.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.