Patent · US Expired

Method for manufacturing an acceleration sensor

US5700702A · kind A · utility

6Cited by

2References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Helmut Klose · Munich, DE
Markus Biebl · Augsburg, DE
Thomas Scheiter · Munich, DE
Christofer Hierold · Munich, DE

Key dates

Filing date	Jul 17, 1996
Grant date	Dec 23, 1997
Priority date	—
Expiry date	Jul 17, 2016

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/159
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Manufacturing method for an acceleration sensor on silicon, whereby, following the manufacture of the doped regions required for the electronic function elements, a polysilicon layer is deposited. The polysilicon layer is structured such that a portion of this polysilicon layer forms an electrode (for example, the emitter electrode (9) and the collector electrode (10) of a transistor) and a sensor layer (17) provided as sensor element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.