Silicon single crystal with low defect density and method of producing same
US5728211A · kind A · utility
39Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Jun 3, 1996 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Jun 3, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.