Semiconductor device having a metal film formed in a groove in an insulating film
US5731634A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Jun 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80.degree. to 500.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.