Method for patterning a photoresist material wherein an anti-reflective coating comprising a copolymer of bisphenol A and benzophenone is used
US5736301A · kind A · utility
13Cited by
9References
3Claims
0Family size
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Key dates
| Filing date | Oct 1, 1996 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Oct 1, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2650/64
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.