James T. Fahey
23Patents
10h-index
30Co-inventors
75Inventor score
Filing activity: Feb 16, 1993 → Sep 15, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5968196A | Configuration control in a programmable logic device using non-volatile elements | Physics | 81 | Expired |
| US5401614A | Mid and deep-UV antireflection coatings and methods for use thereof | Emerging Cross-Sectional Technologies | 46 | Expired |
| US5554485A | Mid and deep-UV antireflection coatings and methods for use thereof | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6207787A | Antireflective coating for microlithography | Chemistry; Metallurgy | 41 | Expired |
| US5607824A | Antireflective coating for microlithography | Chemistry; Metallurgy | 36 | Expired |
| US5848026A | Integrated circuit with flag register for block selection of nonvolatile cells for bulk operations | Physics | 31 | Expired |
| US5547812A | Composition for eliminating microbridging in chemically amplified photoresists comprising a polymer blend of a poly(hydroxystyrene) and a copolymer made of hydroxystyrene and an acrylic monomer | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7615335B2 | Imaging methods | Emerging Cross-Sectional Technologies | 15 | Active |
| US5736301A | Method for patterning a photoresist material wherein an anti-reflective coating comprising a copolymer of bisphenol A and benzophenone is used | Chemistry; Metallurgy | 13 | Expired |
| US7722441B2 | Semiconductor processing | Electricity | 10 | Active |
| US6032279A | Boundary scan system with address dependent instructions | Physics | 10 | Expired |
| US6158034A | Boundary scan method for terminating or modifying integrated circuit operating modes | Physics | 7 | Expired |
| US8228670B2 | Peripheral storage device | Physics | 7 | Active |
| US5783361A | Microlithographic structure with an underlayer film containing a thermolyzed azide compound | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5663036A | Microlithographic structure with an underlayer film comprising a thermolyzed azide | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5795701A | Making of microlithographic structures with an underlayer film containing a thermolyzed azide compound | Emerging Cross-Sectional Technologies | 4 | Expired |
| US9490157B2 | Semiconductor processing | Electricity | 4 | Active |
| US8048606B2 | Imaging methods | Emerging Cross-Sectional Technologies | 2 | Active |
| US7977026B2 | Imaging methods | Emerging Cross-Sectional Technologies | 2 | Active |
| US8053160B2 | Imaging compositions and methods | Physics | 1 | Active |
| US8879246B2 | Peripheral data storage device | Physics | 1 | Active |
| US7270932B2 | Imaging composition and method | Emerging Cross-Sectional Technologies | 0 | Expired |
| US7749685B2 | Imaging methods | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.