Method for depositing a film of titanium nitride
US5741547A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1996 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Jan 23, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a film of titanium nitride on a substrate which includes, positioning the substrate within a chemical vapor deposition reactor chamber which is maintained at a predetermined temperature and pressure; combining a gaseous source of nitrogen with a gaseous source of titanium to form a reactant gas mixture having complementary reactant molecules; and delivering the complementary reactant molecules within the chemical vapor deposition reactor from a selected distance from the substrate of greater than 1 cm. which facilitates the formation of titanium nitride film on the substrate having a given surface roughness which is at least 50% rougher than the titanium nitride film deposited using the same gaseous sources of titanium and nitrogen and which are combined under the same temperature and pressure condition but which are delivered to the surface of the substrate from a distance of about 1 cm. The gaseous sources of nitrogen may include phenylhydrazine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.